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data sheet 1 of 14 rev. 05, 2015-07-07 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! ptva123501ec ptva123501fc thermally-enhanced high power rf ldmos fets 350 w, 50 v, 1200 C 1400 mhz description the ptva123501ec and ptva123501fc ldmos fets are designed for use in power amplifer applications in the 1200 mhz to 1400 mhz frequency band. features include high gain and thermally-enhanced package with slotted and earless fanges. manufactured with infneon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. ptva123501ec package h-36248-2 features ? broadband internal input and output matching ? high gain and effciency ? integrated esd protection ? low thermal resistance ? excellent ruggedness ? pb-free and rohs compliant ? capable of withstanding a 10:1 load mismatch (all phase angles) at 55.5 dbm under pulsed conditions: 300 s pulse width, 12% duty cycle, v dd = 50 v 20 30 40 50 60 70 80 30 35 40 45 50 55 60 30 32 34 36 38 40 42 drain efficiency (%) p out (dbm) p in (dbm) power sweep, pulsed rf i dq = 150 ma, v dd = 50 v, t case = 25 c, 300 s pulse width, 12% duty cycle 1200 mhz 1300 mhz 1400 mhz output power efficiency a123501ec_g1 - 1 rf characteristics pulsed rf performance (tested in infneon test fxture) v dd = 50 v, i dq = 0.15 a, p out = 350 w, ? 1 = 1200 mhz, ? 2 = 1300 mhz, ? 3 = 1400 mhz, 300 s pulse width, 12% duty cycle characteristic symbol min typ max unit gain g ps 16.5 17 db drain efficiency h d 54 55 % return loss irl C12 C9 db ptva123501fc package h-37248-2
ptva123501ec ptva123501fc data sheet 2 of 14 rev. 05, 2015-07-07 dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 105 v drain leakage current v ds = 50 v, v gs = 0 v i dss 1.0 a v ds = 105 v, v gs = 0 v i dss 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.1 w operating gate voltage v ds = 50 v, i dq = 150 ma v gs 3 3.35 4 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 105 v gate-source voltage v gs C6 to +12 v junction temperature t j 200 c storage temperature range t stg C65 to +150 c thermal resistance (t case = 70c, 300 w cw) r qjc 0.34 c/w typical rf performance (not subject to production test, verifed by design/characterization in infneon test fxture) v dd = 50 v, i dq = 150 ma, 30 ms pulse width, 30% duty cycle, class ab test mode of operation ? (mhz) p 1db p 3db p droop (pulse) db @ 300 w gain (db) eff (%) p out (w) gain (db) eff (%) p out (w) pulsed rf 1200 16 47 316 14 48 350 0.23 pulsed rf 1300 16 47 324 14 48 355 0.25 pulsed rf 1400 15.5 45 315 13.5 47 355 0.29 rf characteristics typical rf performance (not subject to production test, verifed by design/characterization in infneon test fxture) v dd = 50 v, i dq = 150 ma, input signal (t r = 5 ns, t f = 6.5 ns), 300 s pulse width, 12% duty cycle, class ab test mode of operation ? (mhz) irl (db) p 1db p 3db max p droop (pulse) db @ 350 w t r (ns) @ 350 w t f (ns) @ 350 w gain (db) eff (%) p out (w) gain (db) eff (%) p out (w) pulsed rf 1200 C14 16.2 59 375 14.2 59 415 0.10 4 5< pulsed rf 1300 C14 16.0 59 390 14.0 59 435 0.15 4 5< pulsed rf 1400 C12 15.8 56 375 13.8 57 415 0.15 4 5<
data sheet 3 of 14 rev. 05, 2015-07-07 ptva123501ec ptva123501fc ordering information type and version order code package description shipping ptva123501ec v2 ptva123501ecv2xwsa1 h-36248-2, bolt-down tray ptva123501ec v2 r250 ptva123501ecv2r250xtma1 h-36248-2, bolt-down tape & reel, 250 pcs ptva123501fc v1 ptva123501fcv1xwsa1 h-37248-2, earless tray ptva123501fc v1 r250 ptva123501fcv1r250xtma1 h-37248-2, earless tape & reel, 250 pcs see next page for typical rf performance
ptva123501ec ptva123501fc data sheet 4 of 14 rev. 05, 2015-07-07 typical rf performance (data taken in production test fixture) 20 30 40 50 60 70 80 30 35 40 45 50 55 60 30 32 34 36 38 40 42 drain efficiency (%) p out (dbm) p in (dbm) power sweep, pulsed rf i dq = 150 ma, v dd = 50 v, t case = 25 c, 300 s pulse width, 12% duty cycle 1200 mhz 1300 mhz 1400 mhz output power efficiency a123501ec_g1 - 1 12 13 14 15 16 17 18 30 32 34 36 38 40 42 gain (db) p in (dbm) power sweep, pulsed rf i dq = 150 ma, v dd = 50 v, t case = 25 c, 300 s pulse width, 12% duty cycle 1200 mhz 1300 mhz 1400 mhz gain a123501ec_g1 - 2 50 55 60 65 70 14 15 16 17 18 1150 1200 1250 1300 1350 1400 1450 drain efficiency (%) gain (db) frequency (mhz) pulsed rf performance i dq = 150 ma, v dd = 50 v, p out = 350 w, 300 s pulse width, 12% duty cycle efficiency gain a123501ec_g1 - 3 - 20 - 18 - 16 - 14 - 12 0 0.05 0.1 0.15 0.2 1100 1200 1300 1400 1500 irl (db) power droop (db) frequency (mhz) pulsed rf performance i dq = 150 ma, v dd = 50 v, p out = 350 w, 300 s pulse width, 12% duty cycle power droop irl a123501ec_g1 - 4
data sheet 5 of 14 rev. 05, 2015-07-07 ptva123501ec ptva123501fc typical rf performance (cont.) 20 30 40 50 60 70 80 30 35 40 45 50 55 60 31 33 35 37 39 41 43 drain efficiency (%) p out (dbm) p in (dbm) power sweep, pulsed rf i dq = 150 ma, v dd = 50 v, t case = 25 c, 2 ms pulse width, 10% duty cycle 1200 mhz 1300 mhz 1400 mhz efficiency output power a123501ec_g2 - 1 12 13 14 15 16 17 18 31 33 35 37 39 41 43 gain (db) p in (dbm) power sweep, pulsed rf i dq = 150 ma,v dd = 50 v, t case = 25 c, 2 ms pulse width, 10% duty cycle 1200 mhz 1300 mhz 1400 mhz gain a123501ec_g2 - 2 50 55 60 65 70 14 15 16 17 18 1150 1200 1250 1300 1350 1400 1450 drain efficiency (%) gain (db) frequency (mhz) pulsed rf performance i dq = 150 ma, v dd = 50 v, p out = 350 w, 2 ms pulse width, 10% duty cycle efficiency gain a123501ec_g2 - 3 - 20 - 18 - 16 - 14 - 12 - 10 0.05 0.1 0.15 0.2 0.25 0.3 1100 1200 1300 1400 1500 irl (db) power droop (db) frequency (mhz) pulsed rf performance i dq = 150 ma, v dd = 50 v, p out = 350 w, 2 ms pulse width, 10% duty cycle a123501ec_g2 - 4 power droop irl
ptva123501ec ptva123501fc data sheet 6 of 14 rev. 05, 2015-07-07 typical rf performance (cont.) 20 30 40 50 60 70 80 30 35 40 45 50 55 60 31 33 35 37 39 41 43 drain efficiency (%) p out (dbm) p in (dbm) power sweep, pulsed rf i dq = 150 ma,v dd = 50 v, t case = 25 c, 16 ms pulse width, 20% duty cycle 1200 mhz 1300 mhz 1400 mhz output power efficiency a123501ec_g3 - 1 12 13 14 15 16 17 18 31 33 35 37 39 41 43 gain (db) p in (dbm) power sweep, pulsed rf i dq = 150 ma, v dd = 50 v, t case = 25 c, 16 ms pulse width, 20% duty cycle 1200 mhz 1300 mhz 1400 mhz gain a123501ec_g3 - 2 50 55 60 65 70 14 15 16 17 18 1150 1200 1250 1300 1350 1400 1450 drain efficiency (%) gain (db) frequency (mhz) pulsed rf performance i dq = 150 ma, v dd = 50 v, p out = 350 w, 16 ms pulse width, 20% duty cycle efficiency gain a123501ec_g3 - 3 - 16 - 14 - 12 - 10 - 8 - 6 0.1 0.15 0.2 0.25 0.3 0.35 1100 1200 1300 1400 1500 irl (db) power droop (db) frequency (mhz) pulsed rf performance i dq = 150 ma, v dd = 50 v, p out = 350 w, 16 ms pulse width, 20% duty cycle a123501ec_g3 - 4 power droop irl
data sheet 7 of 14 rev. 05, 2015-07-07 ptva123501ec ptva123501fc typical rf performance (cont.) 20 30 40 50 60 70 80 30 35 40 45 50 55 60 31 33 35 37 39 41 43 drain efficiency (%) p out (dbm) p in (dbm) power sweep, pulsed rf i dq = 150 ma, v dd = 50 v, t case = 25 c, 16 ms pulse width, 50% duty cycle 1200 mhz 1300 mhz 1400 mhz a123501ec_g4 - 1 output power efficiency 12 13 14 15 16 17 18 31 33 35 37 39 41 43 gain (db) p in (dbm) power sweep, pulsed rf i dq = 150 ma, v dd = 50 v, t case = 25 c, 16 ms pulse width, 50% duty cycle 1200 mhz 1300 mhz 1400 mhz a123501ec_g4 - 2 gain 50 55 60 65 70 12 13 14 15 16 1100 1200 1300 1400 1500 drain efficiency (%) gain (db) frequency (mhz) pulsed rf performance i dq = 150 ma, v dd = 50 v, p out = 350 w, 16 ms pulse width, 50% duty cycle a123501ec_g4 - 3 efficiency gain - 10 - 8 - 6 - 4 - 2 0 0.1 0.2 0.3 0.4 1100 1200 1300 1400 1500 irl (db) power droop (db) frequency (mhz) pulsed rf performance i dq = 150 ma, v dd = 50 v, p out = 350 w, 16 ms pulse width, 50% duty cycle a123501ec_g4 - 4 power droop irl
ptva123501ec ptva123501fc data sheet 8 of 14 rev. 05, 2015-07-07 typical rf performance (cont.) 20 30 40 50 60 70 80 30 35 40 45 50 55 60 31 33 35 37 39 41 43 drain efficiency (%) p out (dbm) p in (dbm) power sweep, pulsed rf i dq = 150 ma, v dd = 50 v, t case = 25 c, 22 ms pulse width, 50% duty cycle 1200 mhz 1300 mhz 1400 mhz a123501ec_g5 - 1 output power efficiency 12 13 14 15 16 17 18 31 33 35 37 39 41 43 gain (db) p in (dbm) power sweep, pulsed rf i dq = 150 ma, v dd = 50 v, t case = 25 c, 22 ms pulse width, 50% duty cycle 1200 mhz 1300 mhz 1400 mhz a123501ec_g5 - 2 gain 50 55 60 65 70 12 13 14 15 16 17 1100 1200 1300 1400 1500 drain efficiency (%) gain (db) frequency (mhz) pulsed rf performance i dq = 150 ma, v dd = 50 v, p out = 330 w, 22 ms pulse width, 50% duty cycle a123501ec_g5 - 3 efficiency gain -16 -14 -12 -10 -8 -6 0 0.1 0.2 0.3 0.4 1100 1200 1300 1400 1500 irl (db) power droop (db) frequency (mhz) pulsed rf performance i dq = 150 ma, v dd = 50 v, p out = 330 w, 22 ms pulse width, 50% duty cycle a123501ec_5 - 4 irl power droop
data sheet 9 of 14 rev. 05, 2015-07-07 ptva123501ec ptva123501fc broadband circuit impedance z source z load g s d load pull at max p out point C 16 s pulse width, 10% duty cycle, class ab, v dd = 50 v, 150 ma freq [mhz] zl [w] p in [dbm] p out [dbm] p out [w] p g [db] pae eff [%] z out [w] 1200 1.91 C j2.04 41.40 56.40 436.52 15 53.80 1.30 C j2.03 1300 2.72 C j3.13 42.24 56.54 450.82 14.30 54.48 1.25 C j1.94 1400 4.83 C j1.46 41.66 56.31 427.56 14.65 53.27 1.03 C j1.94 load pull performance load pull at max g t point C 16 s pulse width, 10% duty cycle, class ab, v dd = 50 v, 150 ma freq [mhz] zl [w] p in [dbm] p out [dbm] p out [w] p g [db] pae eff [%] z out [w] 1200 1.91 C j2.04 38.10 54.72 296.48 16.62 57.89 3.03 C j3.11 1300 2.72 C j3.13 38.84 54.83 304.09 15.99 62.54 3.22 C j1.63 1400 4.83 C j1.46 37.21 53.42 219.79 16.21 57.25 2.30 C j0.09 load pull at max effciency point C 16 s pulse width, 10% duty cycle, class ab, v dd = 50 v, 150 ma freq [mhz] zl [w] p in [dbm] p out [dbm] p out [w] p g [db] pae eff [%] z out [w] 1200 1.91 C j2.04 39.60 55.80 380.19 16.20 60.71 2.22 C j2.43 1300 2.72 C j3.13 39.44 55.23 333.43 15.79 63.71 2.81 C j1.90 1400 4.83 C j1.46 39.39 55.19 330.37 15.80 62.26 2.40 C j1.45 z optimum C 16 s pulse width, 10% duty cycle, class ab, v dd = 50 v, 150 ma freq [mhz] zl [w] p in [dbm] p out [dbm] p out [w] p g [db] pae eff [%] z out [w] 1200 1.91 C j2.04 39.18 55.58 361.41 16.4 60.5 2.41 C j2.50 1300 2.72 C j3.13 39.50 55.30 338.84 15.8 62.6 2.73 C j1.51 1400 4.83 C j1.46 40 55.60 363.08 15.6 60.7 1.86 C j1.37 freq [mhz] z source w z load w r jx r jx 1200 1.25 C1.99 1.96 C2.23 1300 1.54 C1.52 1.59 C2.03 1400 1.66 C1.58 1.26 C1.75
ptva123501ec ptva123501fc data sheet 10 of 14 rev. 05, 2015-07-07 reference circuit reference circuit assembly diagram (not to scale)* rf_out ptva123501ec _out_02 p t v a 1 2 3 5 0 1 e c _ c d _ 0 7 - 1 6 - 2 0 1 3 r 202 c 202 c206 c 211 r 804 c207 v dd ptva123501 ec_in_02 c210 c209 r 201 c204 c205 c208 c203 r 803 c801 c803 c802 r 802 c101 r 102 c103 r 101 r 801 c104 r 103 c 102 c105 c106 rf_in ro6006 , .025 (62) ro 6006 , .025 (62) v dd s 1 s 3 + s 2 c201 find gerber fles for this test fxture on the infneon web site at www.infneon.com/rfpower
data sheet 11 of 14 rev. 05, 2015-07-07 ptva123501ec ptva123501fc components information component description suggested manufacturer p/n input c101 capacitor, 1 f tdk corporation c4532x7r2a105m230ka c102, c103 capacitor, 39 pf atc atc100b390kw500xb c104 capacitor, 10 f tdk corporation c5750x5r1h106k230ka c105 capacitor, 3 pf atc atc100a3r0cw150xb c106 capacitor, 0.5 pf atc atc100a0r5cw150xb c801, c802, c803 capacitor, 1000 pf panasonic electronic components ecj-1vb1h102k r101 resistor, 1000 w panasonic electronic components erj-8geyj102v r102 resistor, 5600 w panasonic electronic components erj-8geyj562v r103, r804 resistor, 10 w panasonic electronic components erj-8geyj100v r801 resistor, 2000 w panasonic electronic components erj-8geyj202v r802 resistor, 1200 w panasonic electronic components erj-3geyj122v r803 resistor, 1300 w panasonic electronic components erj-3geyj132v s1 transistor infneon technologies bcp56 s2 voltage regulator texas instruments lm7805 s3 potentiometer, 2k w bourns inc. 3224w-1-202e output c201 capacitor, 6800 f panasonic electronic components eco-s2ap682ea c202 capacitor, 100 f cornell dubilier electronics (cde) sk101m100st c203 capacitor, 22 f cornell dubilier electronics (cde) sek220m100st c204, c205, c207 capacitor, 39 pf atc atc100b390kw500xb c206, c210 capacitor, 1 f tdk corporation c4532x7r2a105m230ka c208, c209 capacitor, 10 f tdk corporation c5750x5r1h106k230ka c211 capacitor, 10 f panasonic electronic components eev-hd1h100p r201, r202 resistor, 5600 w panasonic electronic components erj-8geyj562v reference circuit (cont.) reference circuit assembly dut ptva123501ec or ptva123501fc test fixture part no. ltn/ptva123501ec v2 or ltn/ptva123501fc v1 pcb rogers 6006, 0.635 mm [0.025"] thick, 2 oz. copper, r = 6.15
ptva123501ec ptva123501fc data sheet 12 of 14 rev. 05, 2015-07-07 package outline specifications package h-36248-2 19 . 431 0. 510 [. 765 0. 020 ] c l 34. 036 [1. 340 ] 19. 812 0 . 200 [. 780 0 . 008 ] 1. 016 [. 040 ] 3. 632 0.380 [. 143 0.015 ] sph 1. 575 [0. 062 ] h - 36248 - 2 _po _01 . 1 _03 - 29 - 2013 45 x 2 . 720 2x 12 . 700 [. 500 ] 4. 826 0 . 510 [. 190 0 . 020 ] 27. 940 [1. 100 ] 4x r1. 524 [r . 060 ] 2x r1. 626 [r . 064 ] d g s flange 9.779 [. 385 ] c l [ . 370 ] +0.004 C0. 006 lid 9. 398 +0 . 100 C0. 150 c l [45 x . 107 ] diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d C drain; g C gate; s C source. 5. lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch].
data sheet 13 of 14 rev. 05, 2015-07-07 ptva123501ec ptva123501fc package outline specifications (cont.) package h-37248-2 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower [. 190 0. 020 ] d g flange 9.779 [. 385 ] 2 x 12.700 [. 500 ] 4. 826 0. 510 lid 9. 398 +0.100 - 0. 150 [ . 370 +0. 004 - 0. 006 ] 19. 431 0. 510 [. 765 0. 020 ] 45 x 2. 720 [45 x .107 ] c l c l 4x r0. 508 +. 381 - . 127 [ r . 020 +0 . 015 - 0. 005 ] h - 37248 - 2 _po _10 - 04 - 2012 s 1. 016 [. 040 ] sph 1. 575 [. 062 ] 19. 812 0. 200 [. 780 0.008 ] 20. 574 [. 810 ] 3 . 632 0.380 [. 143 0.015 ] c l diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d C drain; g C gate; s C source. 5. lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch].

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